Recent developments in SiC device research

Silicon Carbide is fast emerging as a mature semiconductor. The unique comb ination of material properties offered by SIC will allow it to establish it self in applications where the ever dominant Si is approaching the physical (not technical) limits of it's operation. Three key areas will be explored in this paper: (i) High power electronics. SG devices operating at several kV and capable of MW power handling will revolutionise the way electrical power is transmitted and made use of. Recent progress supported by ABB in S weden suggests these breakthroughs will begin to play a key rob soon after the turn of the century. (ii) High frequency devices made from SiC will als o play an increasingly important part in the mobile telecommunication revol ution in which we currently live. Northrop Grumman in the USA have demonstr ated the transmission of digital TV using SIC based devices. The high power density achieved from such devices make them also suitable for base statio ns for mobile telephones. (iii) Finally we look at some examples of how SiC is being used to develop new types of sensors that can be used in extreme environments such as high temperatures, high pressures or corrosive environ ments. Feedback from such sensors is seen as essential to understanding how we effect the world around us and thereby how we can limit pollution.