A study of anisotropic transport properties for electrons in 4H-SiC and 6H-
SiC is presented using a full band Monte Carlo simulation program. The Mont
e Carlo model uses four conduction bands obtained from a full potential ban
d structure calculation based on the Local Density Approximation (LDA) to t
he Density Functional Theory (DFT). The simulations are made both for bulk
material and for Schottky diodes as well. as vertical MESFET transistors. W
e compare the transport properties of the materials in different directions
and study the effects on the I-V characteristics of Schottky diodes as wel
l as the unit current gain frequencies for MESFET transistors.