A study of the anisotropic electron transport in 4H and 6H silicon carbideby Monte Carlo simulation

A study of anisotropic transport properties for electrons in 4H-SiC and 6H- SiC is presented using a full band Monte Carlo simulation program. The Mont e Carlo model uses four conduction bands obtained from a full potential ban d structure calculation based on the Local Density Approximation (LDA) to t he Density Functional Theory (DFT). The simulations are made both for bulk material and for Schottky diodes as well. as vertical MESFET transistors. W e compare the transport properties of the materials in different directions and study the effects on the I-V characteristics of Schottky diodes as wel l as the unit current gain frequencies for MESFET transistors.