Excitation properties of SiC photoluminescence

Authors
Egilsson, T Ivanov, IG Henry, A Janzen, E
Citation
T. Egilsson et al., Excitation properties of SiC photoluminescence, PHYS SCR, T79, 1999, pp. 50-52
Citations number
3
Categorie Soggetti
Physics
Journal title
PHYSICA SCRIPTA
ISSN journal
02811847 → ACNP
Volume
T79
Year of publication
1999
Pages
50 - 52
Database
ISI
SICI code
0281-1847(1999)T79:<50:EPOSP>2.0.ZU;2-Q
Abstract
We report on photoluminescence excitation (PLE) studies of defect luminesce nce in SiC. Two examples are given illustrating the main advantages of the technique. First, the benefits of selective excitation are shown in sorting out a complicated PL spectrum in electron irradiated 4H-SiC. Secondly, the possibility of detecting high energy excited states is demonstrated by the PLE spectrum of the D-1 centre in 4H-SiC