Device aspects of Er-doped Si structures for optoelectric interconnect applications

Pr-doped Si light emitting structures have recently attracted a special int erest in association with potential applications of optical interconnects i n future chip technology. The objective of this study is to estimate some l ower limits for Pr-doped light emitting devices (LED) to be used for this p urpose, and the necessary material and device design considerations in orde r to improve the light emission efficiency. It has been concluded that ther e is an inherent limit to obtain a high efficiency of Pr-related emission s imultaneously with a high modulation frequency. A high transition rate in t he range of sub-ns, which is an improvement of more than three orders of ma gnitude, is expected if one can achieve stimulated emission from Er3+ ions. To experimentally develop this type of devices, Er/O-doped edge emitting L EDs with a SiGe waveguide have been processed with an estimated quantum eff iciency value of 3 . 10(-5). Material choices, device operation modes, and carrier types to affect the electroluminescence (EL) intensity of these Si : Er-LEDs are also discussed.