Fabrication of SiO2/c-Si/SiO2 double barrier structure using lateral solidphase epitaxy

Authors
Novikov, SV Sinkkonen, J
Citation
Sv. Novikov et J. Sinkkonen, Fabrication of SiO2/c-Si/SiO2 double barrier structure using lateral solidphase epitaxy, PHYS SCR, T79, 1999, pp. 213-215
Citations number
3
Categorie Soggetti
Physics
Journal title
PHYSICA SCRIPTA
ISSN journal
02811847 → ACNP
Volume
T79
Year of publication
1999
Pages
213 - 215
Database
ISI
SICI code
0281-1847(1999)T79:<213:FOSDBS>2.0.ZU;2-I
Abstract
Formation of an ultra-thin-film silicon-on-insulator structure by lateral s olid state epitaxy (LSPE) of amorphous Si on SiO2 has been investigated. Th e LSPE growth length was found. The SiO2/Si/SiO2 double barrier structure w ith single crystalline silicon well has been grown.