Formation of shallow n(+)-p junction in silicon by spin-on technique

A simple mixture based on tetraethoxysilane was used to form shallow and hi ghly phosphorus-doped n(+) layers by the spin-on technique. Simultaneous do ping with Yb was also used to improve the characteristics of the structures . The n(+)-p junctions obtained were investigated using optical methods, el ectron microscopy and Auger spectroscopy. Additionally, recombination in su rfaces prepared under different conditions was monitored by a transient mic rowave absorption technique. It was found that the depth of the junction is about 0.4 mu m and the phosphorus concentration at the surface reaches 2.1 0(20) cm(-3). Adding Yb to the spinning solution and the highly doped surfa ce coating by porous silicon layer formation both reduce the surface recomb ination. The lowest obtained value of the surface recombination velocity wa s close to 170 cm/s.