Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique

The properties of GaAs oxides prepared by liquid phase chemical-enhanced ox idation (LPCEO) technique are investigated. The refractive indices of the o xide films appear to increase with oxidation time, and can be well controll ed by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on th e current-voltage (I-V) characteristics of the metal-oxide-semiconductor co nductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (similar to 2 x 10(-8) A/cm(2)), and a high dielect ric breakdown strength of similar to 8 MV/cm is achieved. Finally, the comp lete chemical compositions from the oxide surface to the oxide-substrate in terface has been determined by X-ray photoelectron spectroscopy (XPS) and s econdary ion mass spectroscopy (SIMS) depth profiles.