Effect of oxidation temperature on the electrical characteristics of ultrathin silicon dioxide layers plasma oxidized in ultrahigh vacuum

Ultrathin silicon dioxide layers have been fabricated by the plasma oxidati on of silicon in ultra high vacuum. Temperatures from room temperature to 8 00 degrees C have been used. Although the oxidation temperature has a stron g affect on the oxidation rate, the silicon - silicon dioxide interface sta te denisities are about the sane, around 10(11)/eV cm(2), no matter what te mperature was used. The main difference between samples is the oxide charge , which gets significantly higher if the room temperature oxidation is used instead of temperatures from 600-800 degrees C.