Numerical modelling of the floating body enhanced breakdown in ultra smallnon-fully depleted SOI MOSFETs

A numerical study on the floating body induced breakdown in ultra small non -fully depleted SOI MOSFETs is presented. In short channel devices the floa ting body problem is expected to become large due to high electric fields a nd large sheet resistances in the body of the transistor. We present a simp le method to study the current increase due to impact ionization as a funct ion of transistor width using state of the art two dimensional transport mo dels.