E. Dubaric et al., Numerical modelling of the floating body enhanced breakdown in ultra smallnon-fully depleted SOI MOSFETs, PHYS SCR, T79, 1999, pp. 311-313
A numerical study on the floating body induced breakdown in ultra small non
-fully depleted SOI MOSFETs is presented. In short channel devices the floa
ting body problem is expected to become large due to high electric fields a
nd large sheet resistances in the body of the transistor. We present a simp
le method to study the current increase due to impact ionization as a funct
ion of transistor width using state of the art two dimensional transport mo
dels.