Analytic breakdown modeling for GaAs Schottky diodes

Authors
Park, IY Choi, YI
Citation
Iy. Park et Yi. Choi, Analytic breakdown modeling for GaAs Schottky diodes, PHYS SCR, T79, 1999, pp. 314-317
Citations number
6
Categorie Soggetti
Physics
Journal title
PHYSICA SCRIPTA
ISSN journal
02811847 → ACNP
Volume
T79
Year of publication
1999
Pages
314 - 317
Database
ISI
SICI code
0281-1847(1999)T79:<314:ABMFGS>2.0.ZU;2-I
Abstract
Analytic equations for the breakdown voltage of non-reachthrough and reacht hrough GaAs Schottky diodes have been derived by employing two effective io nization coefficients, gamma(2), gamma(2) for corresponding electric fields . Breakdown equations for the low- and high-concentration regions are succe ssfully derived to have closed-forms that exhibit good agreement with exper imental results.