Trench cathode TIGBT with improved latch-up characteristics

A new TIGBT (Trench Insulated Gate Bipolar Transistor) with a trench cathod e is proposed to suppress the latch-up which is a key problem to limit the maximum operating current. The efficiency of the proposed device is verifie d by numerical analysis with MEDICI. Trench cathode TIGBT could suppress th e latch-up at anode voltage of 300 V and current density of 19 000A/cm(2) w hile planar IGBT and conventional TIGBT latch at the anode current density of 1300 and 4200 A/cm(2), respectively. Forward voltage drops of trench cat hode TIGBT, conventional TIGBT and planar IGBT are 1.53 V, 1.48 V and 2.43 V, respectively. In addition trench cathode TIGBT has very large FBSOA (For ward Biased Safe Operating Area) compared with that of conventional TIGBT a nd planar IGBT.