Characteristics of low temperature poly-Si TFT device and circuits fabricated with disilane

Various fabrication techniques have been employed in order to optimize the performance of poly-Si TFTs device and circuits. We have prepared poly-Si a ctive film by LPCVD and PECVD using monosilane and disilane recrystallized by the low temperature process of ELA and the high temperature process of S PC. The poly-Si TFTs with ELA active films exhibit higher held effect mobil ity and lower threshold voltages than those with SPC active film due to low intragranular trap state density. The poly-Si TFTs with active film deposi ted using Si2H6 exhibit higher mobility and sub-threshold slope than those with active film deposited using SiH4 due to larger poly-Si grain size and lower grain boundary trap state density. The oscillation frequency of a 23- stage CMOS inverter chain and the current driving capability of a CMOS tran smission gate indicate that the low temperature processed circuits with act ive film deposited using Si2H6 and annealed by ELA method exhibit remarkabl e performances.