The broad midgap deep-level transient spectroscopy band in proton (65 MeV)and fast neutron-irradiated n-GaAs

DLTS measurements in H+ (65 MeV)-irradiated n-GaAs reveal a broad band near 250 to 340 K which is similar to the band in neutron-irradiated samples. D LTS evaluation and the modification of this band due to post-irradiation he at treatment indicates that it is formed by two subbands superposed on each other, so the combined band cannot be resolved fully in as-irradiated samp les. The temperature position of the peak and the shape of this band are se nsitive to electric fields in the compensation depletion layers of the dama ge clusters produced upon bombardment. The damage cluster model and the rel ated analytical expression for the response have been extended and simulate d DLTS spectra have been presented for the samples investigated.