The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells

Authors
Okan, SE Aktas, S Akbas, H Tomak, M
Citation
Se. Okan et al., The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells, PHYS ST S-B, 212(2), 1999, pp. 263-270
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
212
Issue
2
Year of publication
1999
Pages
263 - 270
Database
ISI
SICI code
0370-1972(199904)212:2<263:TETEIS>2.0.ZU;2-7
Abstract
The exciton transition energies between valence and conduction subbands of symmetric double quantum wells are studied. To study the effect of geometry coupled wells of rectangular, graded and parabolic shapes are considered. A special emphasis is given to the study of crossover between the symmetric light-hole (e1-11) and the antisymmetric heavy-hole (e2-h2) transitions.