c-axis electronic Raman scattering in Bi2Sr2CaCu2O8+delta

Citation
Hl. Liu et al., c-axis electronic Raman scattering in Bi2Sr2CaCu2O8+delta, PHYS REV L, 82(17), 1999, pp. 3524-3527
Citations number
43
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
17
Year of publication
1999
Pages
3524 - 3527
Database
ISI
SICI code
0031-9007(19990426)82:17<3524:CERSIB>2.0.ZU;2-9
Abstract
We report on the c-axis-polarized electronic Raman scattering of Bi2Sr2CaCu 2O8+delta single crystals with various oxygen concentrations. In the normal state, a resonant electronic continuum extends to 1.5 eV and gains signifi cant intensity as the incoming photon energy increases. Below T-c, a superc onductivity-induced 2 Delta peak is observed for omega < 80 meV and the 2 D elta/k(B)T(c) value increases with decreasing hole doping. In particular, t his A(Ig) 2 Delta peak energy, which is higher than that seen with inplane polarizations for all doping levels studied, signifies distinctly different dynamics of quasiparticles coated with out-of-plane polarization.