Short interval open tube diffusion of Zn in GaAs at low temperatures

Short interval open tube Zn diffusion in GaAs at low temperatures is studie d for application to heterostructure lasers. The electrochemical capacitanc e voltage (ECV) profiling technique is used to obtain the carrier concentra tion versus depth profiles for Zn diffused samples. Diffusion rate is found to be somewhat different from the values obtained for longer durations emp loying similar techniques. Results are applied to improve the ohmic contact quality for Al-free semiconductor lasers grown in our laboratory. No deter ioration is observed in the light versus current (L-I) characteristics of t hese devices fabricated after Zn diffusion.