P-to-n conversion in Hg1-xZnxTe

Citation
S. Rolland et al., P-to-n conversion in Hg1-xZnxTe, SEMIC SCI T, 14(4), 1999, pp. 335-340
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
4
Year of publication
1999
Pages
335 - 340
Database
ISI
SICI code
0268-1242(199904)14:4<335:PCIH>2.0.ZU;2-Z
Abstract
The study of the p-to-n conversion in Hg1-xZnxTe from stoichiometric anneal ings at 260/240 degrees C has shown three types of behaviour, depending on the Zn content: p-to-n conversion is always possible for x < 0.15 and impos sible for x > 0.17. For 0.15 < x < 0.17 this conversion is only possible af ter a short annealing time. The impossibility of p-to-n conversion for x > 0.17 could be explained by the prevailing p-type character of ZnTe but also by the existence of tellurium antisites.