Optical spectra and electronic structure of indium nitride

Citation
Vv. Sobolev et Ma. Zlobina, Optical spectra and electronic structure of indium nitride, SEMICONDUCT, 33(4), 1999, pp. 385-390
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
4
Year of publication
1999
Pages
385 - 390
Database
ISI
SICI code
1063-7826(199904)33:4<385:OSAESO>2.0.ZU;2-V
Abstract
A complete set of fundamental optical functions is calculated for hexagonal indium nitride (w-InN) in the energy range 0-130 eV based on knowledge of the reflection spectrum. The integrated spectrum of the dielectric permitti vity is resolved into elementary components. Three fundamental parameters a re determined for each component (the maximum energy, the width, and the os cillator strength). A possible origin of these components of the dielectric constant is proposed on the basis of known theoretical calculations of the indium nitride band structure. (C) 1999 American Institute of Physics. [S1 063-7826(99)00304-X].