Acoustostimulated activation of bound defects in CdHgTe alloys

This paper describes the results of acoustodynamic studies of the electrica l parameters (effective electron concentration n = 1/eR(H) and Hall mobilit y mu(H) = R-H/rho) of n-CdxHg1-xTe crystals (x approximate to 0.22). It is shown that ultrasonic loading (with intensities up to 0.5X10(4) W/m(2)) lea ds to an increase in the values of n and mu(H) in the impurity-conductivity temperature range (T approximate to 100 K). The authors explain the effect s observed by invoking acoustostimulated liberation (activation) of donor-l ike bound defects, leading to a corresponding decrease in the scattering po tential of alloy nonuniformities. Characteristic parameters of the acoustoe lectric interaction are evaluated in the framework of an assumed dislocatio n model. (C) 1999 American Institute of Physics. [S1063-7826(99)00604-3].