Low-temperature photoluminescence in holmium-doped silicon

Citation
Ba. Andreev et al., Low-temperature photoluminescence in holmium-doped silicon, SEMICONDUCT, 33(4), 1999, pp. 407-409
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
4
Year of publication
1999
Pages
407 - 409
Database
ISI
SICI code
1063-7826(199904)33:4<407:LPIHS>2.0.ZU;2-4
Abstract
In this paper the photoluminescence (PL) of holmium- doped silicon is discu ssed. The silicon was first implanted with holmium ions at energies of 1-2 MeV and doses of 1X10(13)-3 X 10(14) cm(-2), and then annealed at temperatu res of 620-900 degrees C for 0.5-1 h. In order to increase the concentratio n of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14-0.29 MeV and doses of 1X1 0(14)-3 X 10(15) cm(-2). Several photoluminescence lines, which are attribu table to the transitions of electrons from the first excited state of the H o3+ ion (I-5(7)) to the ground state (I-5(8)), were observed. The amplitude s of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm(-1), decreased by more than an order of magnitude in the temperature range 4.2-78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen. (C) 1999 American Institute of Physics. [S1063-7826(99)00804-2].