In this paper the photoluminescence (PL) of holmium- doped silicon is discu
ssed. The silicon was first implanted with holmium ions at energies of 1-2
MeV and doses of 1X10(13)-3 X 10(14) cm(-2), and then annealed at temperatu
res of 620-900 degrees C for 0.5-1 h. In order to increase the concentratio
n of electrically and optically active centers, the silicon was implanted a
second time with oxygen ions at energies of 0.14-0.29 MeV and doses of 1X1
0(14)-3 X 10(15) cm(-2). Several photoluminescence lines, which are attribu
table to the transitions of electrons from the first excited state of the H
o3+ ion (I-5(7)) to the ground state (I-5(8)), were observed. The amplitude
s of the most intense lines, which correspond to transitions at frequencies
5119 and 5103 cm(-1), decreased by more than an order of magnitude in the
temperature range 4.2-78 K. The PL intensity of the holmium ions increased
with increasing concentrations of the implanted rare-earth ions and oxygen.
(C) 1999 American Institute of Physics. [S1063-7826(99)00804-2].