The fabrication of photosensitive In(Au)/Si barrier-contact structures is d
escribed and the photoelectric behavior of these structures upon exposure t
o linearly polarized light incident obliquely on the barrier-contact side i
s investigated. Oscillations are observed in the spectral dependences of th
e photoconversion quantum efficiency and induced photopleochroism. The osci
llations are explained by interference of the linearly polarized light in t
he thin silicon films. (C) 1999 American Institute of Physics. [S1063-7826(
99)01004-2].