Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

Citation
Vm. Botnaryuk et al., Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures, SEMICONDUCT, 33(4), 1999, pp. 412-415
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
4
Year of publication
1999
Pages
412 - 415
Database
ISI
SICI code
1063-7826(199904)33:4<412:OITIPO>2.0.ZU;2-J
Abstract
The fabrication of photosensitive In(Au)/Si barrier-contact structures is d escribed and the photoelectric behavior of these structures upon exposure t o linearly polarized light incident obliquely on the barrier-contact side i s investigated. Oscillations are observed in the spectral dependences of th e photoconversion quantum efficiency and induced photopleochroism. The osci llations are explained by interference of the linearly polarized light in t he thin silicon films. (C) 1999 American Institute of Physics. [S1063-7826( 99)01004-2].