Defects in a-Si : H films induced by Si ion implantation

Undoped a-Si:H films implanted with silicon ions (dose 10(12)-10(14) cm(-2) , mean energy epsilon = 60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) kin the neutral s tate (D-0), change in the charge state D-0-->D-, the a-Si:H -->a-Si transit ion, and growth of inhomogeneity of the structure. It is shown that these e ffects depend on the initial structures and electronic characteristics of t he films. (C) 1999 American Institute of Physics. [S1063-7826(99)01704-4].