Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se-2 solar cells

Results of the application of polarization spectroscopy of the photosensiti vity of ZnO/CdS/Cu(In,Ga)Se-2 thin-film solar cells with different thicknes ses of the CdS (50 and 100 nm) and ZnO (500 and 1000 nm) layers are conside red. It is established that the induced photopleochroism coefficient is low ered while the quantum efficiency of photoconversion of the solar cells is raised by increasing the thickness of the front layer. The experimental con ditions and spectral dependence of the induced photopleochroism are linked with the antireflection properties of the ZnO front layers. It is concluded that photosensitivity polarization spectroscopy can be used for rapid diag nostics of finished solar cells and to optimize their fabrication technolog y. (C) 1999 American Institute of Physics. [S1063-7826(99)02104-3].