Influence of deep traps on current transport in Pd-p(n)-CdTe structures

The current-voltage characteristics and photovoltage of Pd-p(n)-CdTe struct ures and changes in them produced by pulsed hydrogen treatment have been in vestigated. The current transport in Pd-n-CdTe structures [I similar to exp (alpha V)] is found to be linked with double injection of carriers occurrin g as a result of their capture at trapping centers that are uniformly distr ibuted over energy. The semiconductor regime of double injection with I sim ilar to V-2 is important for Pd-p-CdTe structures. A series of deep trappin g centers, including those in the interval 0.75-0.83 eV, is responsible for the extended relaxation of the photovoltage and dark current after a hydro gen pulse (H-2). (C) 1999 American Institute of Physics. [S1063-7826(99)023 04-2].