Piezoelectric properties of PZT films for microcantilever

The investigation of piezoelectric properties of materials in the thin laye r form has become an important task because of the increased range of their applications as actuators and sensors. The sensor magnitude, is a direct f unction of the e(31) piezoelectric constant. Pb(Zr,Ti)O-3 thin films and th e modified compositions have attracted great attention in recent years as p romising for use in microelectromechanical systems. To determine this const ant we use an unusual experimental method. A remanent piezoelectric constan t of -4.7 C/m(2) was obtained. The parameters as, coercive field, saturatio n field, curve of first polarization, and self polarization of the remanent piezoelectric hysteresis loop are presented for 1.6 mu m thick PZT thin fi lm. We will associate also dielectric results. To show the possible integra tion of the piezoelectric films in microelectromechanical systems, we have deposited PZT thin film on a 100 mu m long, 20 mu m wide, 1 mu m thick sili con oxide beam to control the z actuation. (C) 1999 Elsevier Science S.A. A ll rights reserved.