Obtaining low temperature crystallised NiTi films would ensure a good compa
tibility with microelectronics processes and allow deposition on substrates
that could not endure high temperatures, like polymers. We found that NiTi
films containing an excess of Ti (52% at.) are crystallised when deposited
on Si(100) substrates heated up to only 200 degrees C. Resistance vs. temp
erature measurements show typical martensitic transformation behaviour. By
depositing this type of films on polyimide substrates, we obtain bimorph mi
cro-actuators exhibiting a two-way shape memory effect. (C) 1999 Elsevier S
cience S.A. All rights reserved.