Single step electrochemical etching in ammonium fluoride

Citation
H. Ohji et Pj. French, Single step electrochemical etching in ammonium fluoride, SENS ACTU-A, 74(1-3), 1999, pp. 109-112
Citations number
12
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
74
Issue
1-3
Year of publication
1999
Pages
109 - 112
Database
ISI
SICI code
0924-4247(19990420)74:1-3<109:SSEEIA>2.0.ZU;2-V
Abstract
This paper presents a new technique of micromachining using single step ele ctrochemical etching in an ammonium fluoride based etchant. This etching te chnology is to fabricate 3-D structures in single crystal silicon by a comb ination of anisotropic and isotropic etching mode. The etch rate and morpho logy of the etched surface are investigated for the etch parameters (etchan t concentration, current density). Optimization of these parameters mak:es it possible to make free standing beams. Using the ammonium fluoride as the etchant, aluminium survives the etching. (C) 1999 Elsevier Science S.A. Al l rights reserved.