This paper presents a new technique of micromachining using single step ele
ctrochemical etching in an ammonium fluoride based etchant. This etching te
chnology is to fabricate 3-D structures in single crystal silicon by a comb
ination of anisotropic and isotropic etching mode. The etch rate and morpho
logy of the etched surface are investigated for the etch parameters (etchan
t concentration, current density). Optimization of these parameters mak:es
it possible to make free standing beams. Using the ammonium fluoride as the
etchant, aluminium survives the etching. (C) 1999 Elsevier Science S.A. Al
l rights reserved.