In microsystems technologies, frequently complex structures consisting of s
tructured or plain silicon or other wafers have to be joined to one mechani
cally stable configuration. In many cases, wafer bonding, also termed fusio
n bonding, allows to achieve this objective. The present overview will intr
oduce the different requirements surfaces have to fulfill for successful bo
nding especially in the case of silicon wafers. Special emphasis is put on
understanding the atomistic reactions at the bonding interface. This unders
tanding has allowed the development of a simple low temperature bonding app
roach which allows to reach high bonding energies at temperatures as low as
150 degrees C. Implications for pressure sensors will be discussed as well
as various thinning approaches and bonding of dissimilar materials. (C) 19
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