Integration of a sensitive material to a silicon-based device for CO detection

Citation
O. Renault et al., Integration of a sensitive material to a silicon-based device for CO detection, SENS ACTU-A, 74(1-3), 1999, pp. 225-228
Citations number
7
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
74
Issue
1-3
Year of publication
1999
Pages
225 - 228
Database
ISI
SICI code
0924-4247(19990420)74:1-3<225:IOASMT>2.0.ZU;2-P
Abstract
A sensitive semiconductor oxide has been successfully integrated to a silic on-based prototype of sensor for environment pollution as CO. The sensitive material SnO2 includes catalyst Pd aggregates and provides a low temperatu re detection (80-120 degrees C) by conductance change (sensitivity S = (G - G(0))/G(0) = 60 at 120 degrees C for 50 ppm CO in air in steady state and S = 8 in dynamic regime). The (100) silicon substrate, coated by a Si3N4 in sulating film, includes a micro-heater, a temperature measuring resistor, a nd Pt interdigital electrodes, covered with the sensitive material integrat ed using a Ultrasonic Submicronic Aerosol Pyrolysis process at atmospheric pressure. The operating cycle of the system has been studied, regarding to the necessity to reactivate the sensitive material at regular intervals by heating at higher temperature. (C) 1999 Elsevier Science S.A. All rights re served.