Energy barriers at the interfaces in the MIS system Me-Yb2O3-Si

The electrophysical properties of silicon MIS structures with ytterbium oxi de as the insulator are investigated. It is established that the electrical conductivity of the MIS structures are described by a Poole-Frenkel mechan ism. The capacitance-voltage curves are used to measure the trapped charge in the insulator and the density of surface states. The energy barriers for electrons at the interfaces are determined by the method of internal photo emission of charge carriers into the insulator. The parameters of deep elec tron traps in ytterbium oxide are investigated. (C) 1999 American Institute of Physics. [S1063-7842(99)01104-6].