A 2.0 mu m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 mm. Light is absorbed in a 100 period structure consisting of In0.83 Ga0.17As quantum wells strain compensated by In0.83Ga0.17P barrier layers. Photogenerated electrons are injected into a high field In0.52Al0.48As (ion ization rate ratio=0.2) gain region initiating low noise avalanche multipli cation. Primary dark currents of similar to 5 nA and responsivities of 45 A /W at a wavelength of 1.9 mu m are observed. (C) 1999 American Institute of Physics. [S0003-6951(99)03118-6].