Simulation and characterization of the selective area growth process

Authors
Alam, MA People, R Isaacs, E Kim, CY Evans-Lutterodt, K Siegrist, T Pernell, TL Vandenberg, J Sputz, SK Chu, SNG Lang, DV Smith, L Hybertsen, MS
Citation
Ma. Alam et al., Simulation and characterization of the selective area growth process, APPL PHYS L, 74(18), 1999, pp. 2617-2619
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
18
Year of publication
1999
Pages
2617 - 2619
Database
ISI
SICI code
0003-6951(19990503)74:18<2617:SACOTS>2.0.ZU;2-3
Abstract
A simple three-dimensional vapor phase model is used to interpret and clari fy the selective area growth process. The model predicts both normal and an omalous profiles of thickness and composition, including long range effects . These are verified by an extensive set of experiments. (C) 1999 American Institute of Physics. [S0003-6951(99)02018-5].