The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3

An experimental atomic resolution analysis of an undoped Sigma 5 36 degrees [001] tilt grain boundary in SrTiO3 shows that the structure contains inco mplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the bou ndary in the presence of MnO2 does not change the atomic structure of the b oundary plane, and results in a high concentration of Mn3+ (acceptor) enric hment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane. (C) 1999 American Institute of Physics. [S0003-6951(99)006 18-X].