Electrical activation kinetics for shallow boron implants in silicon

Silicon implanted with boron at 10(15) cm(-2) dose and energies from 500 eV to 1 keV were annealed over wide variations in temperature and time to obt ain process kinetics and thermal activation energies for shallow junction f ormation. Diffusion depths and carrier densities were determined by modelin g sheet electrical transport. The thermal activation energy for the mean ti me to produce electrical activation is found to be 5.1+/-0.1 eV, while for the mean diffusivity it is found to be 4.1+/-0.1 eV. The 1 eV difference ex presses quantitatively the particular advantage of spike thermal anneals at temperatures above 1000 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)04018-8].