Negative luminescence from type-II InAs/GaSb superlattice photodiodes

Authors
Olafsen, LJ Vurgaftman, I Bewley, WW Felix, CL Aifer, EH Meyer, JR Waterman, JR Mason, W
Citation
Lj. Olafsen et al., Negative luminescence from type-II InAs/GaSb superlattice photodiodes, APPL PHYS L, 74(18), 1999, pp. 2681-2683
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
18
Year of publication
1999
Pages
2681 - 2683
Database
ISI
SICI code
0003-6951(19990503)74:18<2681:NLFTIS>2.0.ZU;2-R
Abstract
Strong negative luminescence is displayed by type-II InAs/GaSb superlattice diodes under reverse bias. The negative emittance at room temperature is a s high as 1.5 mu W/cm(2) meV at 4.9 mu m, and the negative efficiency at 3. 5 mu m is 41% of the emission from a perfect blackbody at that temperature. The main features of the data are reproduced by a detailed photodiode simu lation. (C) 1999 American Institute of Physics. [S0003-6951(99)05218-3].