Silane adsorption and reaction on Pd(100) have been investigated between 23
-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a
silane/argon mixture at a substrate temperature of 23 K results in physiso
rbed islands of silane with argon matrix isolated silane in subsequent laye
rs. At a substrate temperature of 70 K the silane forms a uniform physisorb
ed layer on the surface which undergoes dissociative chemisorption at simil
ar to 78 K. On Pd(100) a surface stabilised SIH moiety is formed; direct ad
sorption at 80 K leads to the formation of islands of SiH with overlayers o
f physisorbed molecular silane. The SiH species is stable to 200 K at which
point complete dissociation occurs. (C) 1999 Elsevier Science B.V. All rig
hts reserved.