Low-temperature preparation of ITO films by dual ion beam sputtering

Citation
Y. Suzaki et al., Low-temperature preparation of ITO films by dual ion beam sputtering, ELEC C JP 2, 82(5), 1999, pp. 30-35
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
82
Issue
5
Year of publication
1999
Pages
30 - 35
Database
ISI
SICI code
8756-663X(199905)82:5<30:LPOIFB>2.0.ZU;2-G
Abstract
In this article, we discuss the preparation of indium tin oxide (ITO) by io n beam sputtering and irradiation of the film surface with He and O-2 gas w ith an assist ion gun during deposition. The physical properties of the thi n film were examined using the van der Pauw, SEM, and X-ray diffraction tec hniques. The influence of the assist ion gun on the ITO film was studied an d adjusted to improve the reflectivity of the film. Details on the optical and electrical properties of the ITO film and structural changes that occur red are presented. (C) 1999 Scripta Technica, Electron Comm Jpn Pt 2, 82(5) : 30-35, 1999.