A silicon MEMS optical switch attenuator and its use in lightwave subsystems

Citation
Cr. Giles et al., A silicon MEMS optical switch attenuator and its use in lightwave subsystems, IEEE S T QU, 5(1), 1999, pp. 18-25
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
5
Issue
1
Year of publication
1999
Pages
18 - 25
Database
ISI
SICI code
1077-260X(199901/02)5:1<18:ASMOSA>2.0.ZU;2-S
Abstract
A single-mode fiber connectorized microelectromechanical systems (MEMS) ref lective optical switch attenuator operating in the 1550-nm wavelength regio n is described. The device consists of an electrostatically actuated gold-c oated silicon vane interposed in a fiber gap yielding 0.81-dB minimum inser tion loss in the transmit state and high transmission isolation in the refl ection state with 2.15-dB minimum return loss. The switch attenuators also work as continuously variable optical attenuators capable of greater than 5 0-dB dynamic range and can be accurately regulated with a simple feedback c ontrol circuit. Switching voltages mere in the range of 5-40 V and a switch ing time of 64 mu s was achieved. The MEMS switch can be used in optical subsystems within a wavelength-divis ion-multiplexed (WDM) optical network such as optical power regulators, cro ssconnects, and add/drop multiplexers, We used a discrete array of 16 switc h attenuators to implement a reconfigurable 16-channel 100-GHz spacing WDM drop module of an add/drop multiplexer, Thru-channel extinction was greater than 40 dB and average insertion loss was 21 dB, Both drop-and-transmit of multiple channels (11-18-dB contrast, 14-19-dB insertion loss) and drop-an d-detect of single channels (>20-dB adjacent channel rejection, 10-14-dB in sertion loss) were demonstrated.