We report for the first time the monolithic integration of a micromechanica
l modulator and a p-n photodiode on a silicon substrate yielding a versatil
e optoelectronic device, Because both devices are monolithically integrated
on a silicon substrate, the combination is compact with minimal parasitic
elements. We demonstrate that such a device combination yields a transistor
-like element with positive and negative small-signal voltage amplification
, The maximum small-signal voltage gain achieved is 500 while the modulated
current of the device exhibits a maximum ON-OFF ratio of 3:1, In addition,
while the theoretical current gain of the device is infinite, a 10-pA nois
e level limited the measured de current gain to 10(6).