Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET

Analytical modeling of the threshold voltage of a Si1-xCex/Si heterojunctio n pMOSFET has been performed using a quasi-two-dimensional (quasi-2-D) appr oach for the calculation of the potential. It is shown that the use of Si1- xGex in the source region leads to an improvement in the short-channel beha vior of deep submicron pMOSFET's. The V-T roll-off can be substantially dec reased by introducing a material dependent barrier between source and chann el. Furthermore it will be proven that this advantage will become stronger when channel lengths are decreased toward the deep submicron regime.