An efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness

As the gate oxide thickness is vigorously scaled down, quantization-induced charge layer thickness in MOSFET's has to be considered for accurate MOSFE T intrinsic capacitance modeling for circuit simulation. We report in this paper an analytical MOSFET intrinsic capacitance model incorporating the co ncept of charge layer thickness, which was developed based on the self-cons istent solution of the Schrodinger and Poisson equations with Fermi-Dirac s tatistics. The results demonstrate that this model has excellent accuracy a nd simulation performance.