Characterization of extrinsic oxide breakdown on thin dielectric oxide

Authors
Shiga, K Komori, J Katsumata, M Teramoto, A Mashiko, Y
Citation
K. Shiga et al., Characterization of extrinsic oxide breakdown on thin dielectric oxide, IEICE TR EL, E82C(4), 1999, pp. 589-592
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E82C
Issue
4
Year of publication
1999
Pages
589 - 592
Database
ISI
SICI code
0916-8524(199904)E82C:4<589:COEOBO>2.0.ZU;2-M
Abstract
A new method using new test structure, which is connected 15.4 million MOS transistor: for evaluating: extrinsic oxide breakdown is proposed. The acti ve gate area which is needed to predict reliability will be shown. And by u sing this new method, activation energy not only for the intrinsic breakdow n but also for the extrinsic breakdown are obtained.