Determination of base and emitter resistances in bipolar junction transistors from low frequency noise and static measurements

A novel method of extraction of emitter, R-e, and base, R-b, resistances of bipolar junction transistors: BJTs, is proposed. R-e and R-b are obtained from static characteristics and noise power spectral density of low frequen cy, 1/f, fluctuations, measured in the base and collector currents of the d evices. Measurements carried out on quasi self-aligned silicon BJTs show th at R-e and R-b values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout .