The growth of Cu thin films by low pressure chemical vapor deposition

Authors
Ramaiah, KS Pilkington, RD Hill, AE Tomlinson, RD
Citation
Ks. Ramaiah et al., The growth of Cu thin films by low pressure chemical vapor deposition, J MAT S-M E, 10(1), 1999, pp. 51-57
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
10
Issue
1
Year of publication
1999
Pages
51 - 57
Database
ISI
SICI code
0957-4522(199903)10:1<51:TGOCTF>2.0.ZU;2-J
Abstract
We study the growth of Cu films en route to the production of CuInSe2 thin films as absorber layers in solar cells by a low pressure chemical vapor de position technique. In order to obtain good quality films, the deposition c onditions such as substrate, source temperatures, concentration ratio of Ar to H-2 have been optimized. The surface morphology and structural analysis of Cu films have been carried out. It is revealed that annealing resulted in a change in the properties of the films and also in the generation of ot her phases such as gamma-Cu5Si (cubic) and CuO (monoclinic). (C) 1999 Kluwe r Academic Publishers.