On the use of dielectric films in temperature measurements: application tothe realization of capacitive thermometers for temperatures < 5K

The paper deals with the first results obtained on the properties of films, deposited by PACVD to be used as dielectric in capacitive thermometers. Th e composition (Si, O, C, H) and bond distribution are characterized, by ion beam analysis and infrared spectrometry, versus the plasma precursor: TEOS and mixtures TEOS + He. This is shown to play mainly a role on the carbon bonding distribution (CH bonds tends to be replaced by CO ones). In paralle l the measurements of C(T) for two capacitors show that composition and bon d distribution are as well leading parameters for the dielectric properties of our 'tentative thermometers'. (C) 1999 Published by Elsevier Science B. V. All rights reserved.