Electrical properties of oxynitride thin films using noise and charge pumping measurements

Slow traps and interface traps density has been measured using low frequenc y (10 Hz) noise and charge pumping measurements. The study has been carried out on n-channel metal-oxide-semiconductor transistors with ultra thin gat e dielectrics prepared by rapid thermal oxidation (RTO) and low pressure ra pid thermal chemical vapor deposition. For both deposition methods, the int erface trap characteristics have been studied as a function of nitrogen con centration as well as thermal annealing parameters (ambient and temperature ). Experimental results have shown that a stacked dielectric combined RTO g ate oxide (grown under N2O) and chemical vapor deposition oxynitride (cappi ng layer with 8%, atomic nitrogen concentration), offers a solution for gat e dielectrics with thickness greater than or equal to 2 nm. (C) 1999 Elsevi er Science B.V. All rights reserved.