Influence of polycide deposition on the reliability of wet and nitrided oxides

We investigate the deposition affect of policide (polycrystalline silicon a nd silicide) of tungsten and tantalum (sputtered TaSi2 and chemical vapor d eposition WSi2) on the reliability of wet and nitrided silicon dioxide film s (thickness = 6.6 nm) under Fowler-Nordheim electron injections. We confir med that nitridation improves the oxide integrity whatever the polycide lay er. It is demonstrated that the polycide process has a complex affect on th e generation of defects (positive and negative charges, interface states, n eutral traps) and on the stress induced leakage current. (C) 1999 Elsevier Science B.V. All rights reserved.