Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

The effect of post-oxidation treatments in nitric oxide (NO) on the interfa ce defects in (100) Si/SiO2 is studied by the electron paramagnetic resonan ce (EPR) spectroscopy (9 GHz and 300 K) and nuclear analysis techniques. Ou r results show that the interface structure is modified due to a self-limit ing, localized incorporation of NO at the interface. The modified interface has an intrinsic interface defect density of less than or equal to 10(11) cm(-2). NO thermal treatments open the perspective for the growth of hydrog en free low defect density Si/SiO2 structures. (C) 1999 Published by Elsevi er Science B.V. All rights reserved.