We report an experimental study on the optical absorption and photoluminesc
ence detected in samples of natural silica. Our results show that the two e
mission bands, beta (similar to 3.1 eV) and alpha(E) (similar to 4.3 eV), h
ave an excitation profile in the Vacuum ultraviolet region with a maximum a
t similar to 7.5 eV. This excitation profile indicates that, in terms of en
ergy levels of the luminescent defect, there is a transition from a ground
state, S-0, to a second excited state, S-2 able to excite PL emission, in a
ddition to the well known transition corresponding to the optical absorptio
n band, B-2 beta Our data are in a quantitative agreement with 'ab initio'
calculations carried out for a two-fold coordinated Ge defect in SiO2 and e
xclude a correlation between the S-0 --> S-2 transition and the 7.6 eV E ba
nd. (C) 1999 Elsevier Science B.V. All rights reserved.