Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy

Citation
G. Tallarida et al., Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy, J NON-CRYST, 245, 1999, pp. 210-216
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
245
Year of publication
1999
Pages
210 - 216
Database
ISI
SICI code
0022-3093(19990401)245:<210:SMONTT>2.0.ZU;2-B
Abstract
In this work the surface morphology of nitrided silicon dioxide is extensiv ely studied using atomic force microscopy. Nitridation is obtained by therm al annealing in nitriding atmosphere in conventional furnace, immediately a fter thermal oxidation of silicon substrates. The characterisation performe d concerns the oxide surface, as well as the region where nitrogen is incor porated, the latter exposed using a diluted NF solution. Significant differ ences in the morphology of the nitrided layer are observed, which are a fun ction of the nitridation process applied. They allow us to correlate the mo rphology to the nitrogen incorporation mechanisms that have occurred. (C) 1 999 Elsevier Science B.V. All rights reserved.