In this work the surface morphology of nitrided silicon dioxide is extensiv
ely studied using atomic force microscopy. Nitridation is obtained by therm
al annealing in nitriding atmosphere in conventional furnace, immediately a
fter thermal oxidation of silicon substrates. The characterisation performe
d concerns the oxide surface, as well as the region where nitrogen is incor
porated, the latter exposed using a diluted NF solution. Significant differ
ences in the morphology of the nitrided layer are observed, which are a fun
ction of the nitridation process applied. They allow us to correlate the mo
rphology to the nitrogen incorporation mechanisms that have occurred. (C) 1
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